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| APT60DS10HJ ISOTOP(R) Schottky Diode Full Bridge Power Module Application * * * Switch mode power supplies rectifier Induction heating Welding equipment VRRM = 100V IF = 60A @ Tc = 80C Features * * * * * * Ultra fast recovery times Soft recovery characteristics High current Very low stray inductance High level of integration ISOTOP(R) Package (SOT-227) + ~ - Benefits * * * * * * Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant ~ Absolute maximum ratings Symbol VR VRRM IFAV IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Rectangular, d=0.5 Non-Repetitive Forward Surge Current Max ratings 100 TC = 80C TJ = 45C 60 700 Unit V A APT60DS10HJ - Rev 0 November, 2009 t=10ms These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-3 APT60DS10HJ All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic IR VF Reverse Current Forward Voltage Test Conditions VR = 100V IF = 60A Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min Typ 2 20 0.91 0.74 Max Unit mA V Thermal and package characteristics Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal resistance Junction to Ambient RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min Typ Max 0.8 20 150 300 1.5 Unit C/W V C N.m g Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 2500 -55 29.2 SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 0.75 (.030) 0.85 (.033) 25.2 (0.992) 25.4 (1.000) 3.30 (.130) 12.6 (.496) 4.57 (.180) 12.8 (.504) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 1.95 (.077) 2.14 (.084) Dimensions in Millimeters and (Inches) APT60DS10HJ - Rev 0 November, 2009 www.microsemi.com 2-3 APT60DS10HJ Typical Performance Curve Forward Characteristic 120 100 TJ=125C 80 IF (A) 60 40 20 0 0.0 0.2 0.4 0.6 VF (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 Thermal Impedance (C/W) 0.8 0.6 0.4 0.3 0.2 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.9 0.7 0.5 0.8 1.0 1.2 TJ=25C 0.05 0 0.00001 Rectangular Pulse Duration in Seconds ISOTOP(R) is a registered trademark of ST Microelectronics NV APT60DS10HJ - Rev 0 November, 2009 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 3-3 |
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